Qualcomm Snapdragon 845 – new flagship processor with 10nm node and RAM LPDDR4X
Some sources have started talking about Snapdragon 845, the successor to the current Qualcomm top range, the Snapdragon 835, featured on some international versions of the Galaxy S8. The latest novelties about the new SoC (or Mobile Platform, as the American producer calls them from the latter generation) come from MyDrivers and describe in a way not surprisingly a processor with cutting-edge technology solutions.
The chip will be based on the same production process as Snapdragon 835, so the Low Power Early (LPE) FinFET at 10 nm. In this case, it is surprising that Qualcomm has not preferred the latest Low Power Plus (LPP) of the second generation of Samsung (the company that Qualcomm entrusts for the realization of the chips). Ryan Lee, VP of Foundry Marketing for Samsung E., announced in April the start of the volume production phase of the new process 10LPP.
It had previously been claimed that the new Snapdragon 845 would use an even more advanced 7-nm production process, but it seems that Qualcomm has decided to adopt a more conservative approach to the new top chip. According to the information released today in an unofficial Snapdragon 845 should use four cores Cortex-A75, combined with a secondary CPU with four cores low-power Cortex-A53.
The matched GPU will be an Adreno 630, while the Snapdragon X20 LTE will be the reference modem incorporating the connection support 4G LTE Cat. 18 at a maximum speed of 1.2 Gbps. There will be no UFS 2.1 storage for data storage and RAM LPDDR4X faster and more efficient than current technologies. Let’s point out, however, that these are speculations that have never been officially confirmed, with plans that could be modified before launch.
According to the leaked information Qualcomm Snapdragon 845 should be available in the first three months of 2018, so right in time – as per tradition – for announcements of the upcoming Mobile World Congress.